RJK03E0DNS
Main Characteristics
Power vs. Temperature Derating
40
30
1000
100
Preliminary
Maximum Safe Operation Area
1
m
s
20
10
PW = 10 ms
Operation in
10
1
this area is
limited by R DS(on)
Tc = 25 °C
0.1 1 shot Pulse
0
50
100
150
200
0.1
1
10
100
50
Case Temperature Tc (°C)
Typical Output Characteristics
50
Drain to Source Voltage V DS (V)
Typical Transfer Characteristics
40
4.5 V
10 V
3.2 V
Pulse Test
3.0 V
40
V DS = 5 V
Pulse Test
30
30
20
2.8 V
20
10
V GS = 2.6 V
10
Tc = 75°C
25°C
–25°C
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage V DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
200
150
100
Pulse Test
100
30
10
Pulse Test
V GS = 4.5 V
50
I D = 10 A
3
10 V
5A
2A
0
4
8
12
16
20
1
1
3
10
30
100
300 1000
Gate to Source Voltage V GS (V)
R07DS0656EJ0300 Rev.3.00
Feb 01, 2012
Drain Current I D (A)
Page 3 of 6
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RJK03E1DNS-00-J5 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET Power Switching
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